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| 1SS133 Diodes Switching diode 1SS133 !Applications High speed switching !External dimensions (Units : mm) CATHODE BAND (YELLOW) 0.40.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.01.0 2.70.3 29.01.0 1.80.2 ROHM : MSD EIAJ : - JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65~+175 Unit V V mA mA mA mW C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 0.5 2 4 Unit V A pF ns IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=50 Conditions 1SS133 Diodes !Electrical characteristics curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT(pF) 100 50 FORWARD CURRENT : IF (mA) 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 3000 REVERSE CURRENT : IR (nA) 100C 20 10 5 2 1 0.5 0.2 0 Ta=12 5C Ta=75 C Ta=25C Ta=-25 C 1000 300 70C 50C 100 30 10 3 Ta=25C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 3 REVERSE RECOVERY TIME : trr (ns) SURGE CURRENT : Isurge (A) 10 VR=6V Irr=1/10IR 5 PULSE Single pulse 2 2 1 0.5 1 0.2 0.1 0.01 0 0 10 20 30 0.1 1 10 100 1000 FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0.01F D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig. 6 Reverse recovery time (trr) measurement circuit |
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